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2N7008
N-Channel Enhancement-Mode MOS Transistor
~SilicDnix ~ incorporated
PRODUCT SUMMARY
V(BR)OSS rOS(ON)
10
(V)
(.0)
(A)
60
7.5
0.15
PACKAGE TO-92
Performance Curves: VNDS06 (See Section 7)
TO-92
BOTTOM VIEW
1 SOURCE
2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
2N7008
UNITS
Drain-Source Voltage
Vos
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current 1
Tc= 25°C 10
Tc = 100°C
10M
Power Dissipation
Tc= 25°C
Po Tc = 100°C
Operating Junction Temperature
Tj
Storage Temperature
T stg
Lead Temperature (1/16" from case for 10 seconds)
TL
60 V
±40
0.15
0.
2N7008 Datasheet
