2N3958
.monolithic dual n-channel JFETs
Siliconix Performance Curves NQP See Section 4 designed for
- -
- - Low and Medium Frequency Di Herential Amplifiers
- High Input Impedance Amplifiers
- ABSOLUTE MAXIMUM RATINGS (25°C)
BENEFITS
- Wide Dynamic Range IG Specified @ V DS = 20 V
- Low Capacitance Ciss <4 p F
TO- 71 Sea Section 6
Any Lead-To-Case Voltage ±100 V Gate:Orail1 OJ Gate- ~ource Voltage - .. -50 V Gate Current " 50 rn A Total Device Dissipation at (Each Side) 250 m W
85°C Case Temperature (Both Sides) 500 m W
Power Derating (Each Side) 2.86 m Wr C (Both Sides) - 4.3 m Wr C
Storage Temperature Range -65 to +250°C Lead Temperature (1/16" from case for 10seconds)... 300°C
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- ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) l 0,
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