• Part: SSM2301N
  • Description: P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Silicon
  • Size: 178.16 KB
Download SSM2301N Datasheet PDF
Silicon
SSM2301N
Description SOT-23 Power MOSFETs from Silicon Standard Corp. provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for mercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 20 ± 12 -2.3 -1.5 -10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Value Max. 100 Unit °C/W Rev.2.02 3/11/2004 .Silicon Standard. 1 of 6 .. Electrical Characteristics @ Tj=25o C (unless otherwise...