SWK4606 - 30V Complementary Enhancement-Mode MOSFET

General Description

Low gate charge.

Use as a load switch.

Use in PWM applications SWK4606 30V Complementary Enhancement-Mode MOSFET Product Summary N-Channel P-Channel BVDSS = 30V RDS(on) (@VGS= 10V) < 30mΩ RDS(on) (@VGS= 4.5V) < 42mΩ BVDSS = -30V RDS(on) (@VGS= -

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Datasheet Details

Part number	SWK4606
Manufacturer	Silicon Wisdom
File Size	167.80 KB
Description	30V Complementary Enhancement-Mode MOSFET
Datasheet	SWK4606 Datasheet

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General Description ● Low gate charge. ● Use as a load switch. ● Use in PWM applications SWK4606 30V Complementary Enhancement-Mode MOSFET Product Summary N-Channel P-Channel ● BVDSS = 30V ● RDS(on) (@VGS= 10V) < 30mΩ ● RDS(on) (@VGS= 4.5V) < 42mΩ ● BVDSS = -30V ● RDS(on) (@VGS= -10V) < 28mΩ ● RDS(on) (@VGS= -4.5V) < 44mΩ SOP-8 D1 D1 D2 D2 Pin1 S1 G1 S2 G2 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (TA=25ºC) Drain Current (TA=75ºC) Pulsed Drain Current a Power Dissipation b (TA=25ºC) Power Dissipation b (TA=75ºC) Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ, TSTG Maximum N-Channel 30 ±20 6 4 24 2.5 1.0 -55 ~ +150 P-Channel -30 ±20 -6.5 -4.5 -28 2.5 1.