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SSM9980GM - Dual N-channel Enhancement-mode Power MOSFET

Download the SSM9980GM datasheet PDF. This datasheet also covers the SSM9980M variant, as both devices belong to the same dual n-channel enhancement-mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM9980M-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9980GM
Manufacturer Silicon Standard
File Size 218.36 KB
Description Dual N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM9980GM Datasheet

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Other Datasheets by Silicon Standard

Part Number Description
SSM9980GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9980GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9980M Dual N-channel Enhancement-mode Power MOSFET
SSM9985GM N-channel Enhancement-mode Power MOSFET
SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

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SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BV DSS R DS(ON) ID 80V 52mΩ 4.6A D1 G1 G2 D2 The SSM9980M is in the SO-8 package, which is widely preferred for S1 S2 commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM.
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