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SSM9960M - Dual N-Channel Enhancement Mode Power MOSFET

Download the SSM9960M datasheet PDF. This datasheet also covers the SSM9960GM variant, as both devices belong to the same dual n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM9960GM_SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9960M
Manufacturer Silicon Standard
File Size 274.67 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SSM9960M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 20mΩ 7.8A ID SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9960M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.