SSM85T08GP
DESCRIPTION
BVDSS RDS(ON) ID
The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM85T08GP) are available for low-profile applications.
GD S
80V 13mΩ
75A
TO-263(S)
Pb-free; Ro HS-pliant
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
EAS IAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3...
