The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit.
It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash.
| Part number | SSM20G45EGH |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 724.72 KB |
| Description | N-channel Insulated-Gate Bipolar Transistor |
| Datasheet |
 SSM20G45EGH Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| SSM2000 | HUSH Stereo Noise Reduction | Analog |
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| SSM200UF-A | (SSMxxxUF-A) HERMETIC ULTRAFAST DIODE | Sensitron |
| SSM200UF3A | (SSMxxxUF3A) HERMETIC ULTRAFAST DIODE | Sensitron |
| SSM2011 | Audio Preamplifier System | Solid State Micro Technology |
| Part Number | Description |
|---|---|
| SSM20G45EGJ | N-channel Insulated-Gate Bipolar Transistor |
| SSM2030GM | N- and P-channel Enhancement-mode Power MOSFET |
| SSM20N03P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM20N03S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM20P02H | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
