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SGTP50V65UF1P7 - 650V FIELD STOP IGBT

Download the SGTP50V65UF1P7 datasheet PDF. This datasheet also covers the SGTP50V65UF1P7-SilanSemiconductors variant, as both devices belong to the same 650v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

Description

The SGTP50V65UF1P7 field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGTP50V65UF1P7-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGTP50V65UF1P7
Manufacturer Silan Semiconductors
File Size 405.07 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP50V65UF1P7 Datasheet

Full PDF Text Transcription

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Silan Microelectronics SGTP50V65UF1P7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTP50V65UF1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  50A, 650V, VCE(sat)(typ.)=1.60V@IC=50A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Industrial grade Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT P 50 V 65 UF ORDERING INFORMATION Part No. SGTP50V65UF1P7 Package TO-247-3L 1 P7 Package P7 : TO-247-3L 1,2,3 : Version No.
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