SCDP120R040NP4B - 1200V SiC MOS POWER TRANSISTOR

Silan Semiconductors

General Description

SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

It achieves low conduction loss and switching losses.

Key Features

66A, 1200V, RDS(on)(typ. )= 40m@VGS=15V.
Silicon Carbide technology.
Low switching loss.
Low reverse recovery charge.
Reduced requirement for heat dissipation.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant KEY.

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SCDP120R040NP4B 1200v sic mos power transistor by Silan Semiconductors - Datasheet Preview

Datasheet Details

Part number	SCDP120R040NP4B
Manufacturer	Silan Semiconductors
File Size	682.97 KB
Description	1200V SiC MOS POWER TRANSISTOR
Datasheet	SCDP120R040NP4B Datasheet

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Silan Microelectronics SCDP120R040NP4B_Datasheet 40mΩ, 1200V SiC MOS POWER TRANSISTOR DESCRIPTION SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for switching power supplies, inverters, and DC-DC converters. FEATURES  66A, 1200V, RDS(on)(typ.