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SVTP209R7NP7 - N-CHANNEL MOSFET

Datasheet Summary

Description

SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • 130A, 200V, RDS(on)(typ. )=8.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 1 23 TO-247-3L KEY.

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Datasheet preview – SVTP209R7NP7

Datasheet Details

Part number SVTP209R7NP7
Manufacturer Silan Microelectronics
File Size 285.22 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVTP209R7NP7 Datasheet
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Silan Microelectronics SVTP209R7NP7_Datasheet 130A, 200V N-CHANNEL MOSFET DESCRIPTION SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1. Gate 2. Drain 3.Source FEATURES  130A, 200V, RDS(on)(typ.)=8.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 23 TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ.
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