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SVT4607SA - N+P-CHANNEL MOSFET

Datasheet Summary

Description

technology.

Features

  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 8 4 1 23 SOP-8-225-1.27 KEY.

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Datasheet preview – SVT4607SA

Datasheet Details

Part number SVT4607SA
Manufacturer Silan Microelectronics
File Size 434.66 KB
Description N+P-CHANNEL MOSFET
Datasheet download datasheet SVT4607SA Datasheet
Additional preview pages of the SVT4607SA datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT4607SA_Datasheet 30V N+P CHANNEL MOSFET DESCRIPTION 78 56 SVT4607SA is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 2 4 especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. These devices are widely used in UPS, Power Management for Inverter Systems. 1 3 1,3. Source 2, 4. Gate 7, 8, 5, 6. Drain FEATURES  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 8 4 1 23 SOP-8-225-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on)，max ID Qg.
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