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SVT3025D - N-CHANNEL MOSFET

This page provides the datasheet information for the SVT3025D, a member of the SVT3025D4 N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVT3025D4 is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 3 1 2 45 TO-252-4L KEY.

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Datasheet preview – SVT3025D

Datasheet Details

Part number SVT3025D
Manufacturer Silan Microelectronics
File Size 416.89 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT3025D Datasheet
Additional preview pages of the SVT3025D datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT3025D4_Datasheet 30V N+P CHANNEL MOSFET DESCRIPTION SVT3025D4 is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. These devices are widely used in UPS, Power Management for Inverter Systems. 3 3 2 5 1 4 1,4. Source 2, 5. Gate 3. Drain FEATURES  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 3 1 2 45 TO-252-4L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on)，max ID Qg.
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