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SVT077R5ND - N-CHANNEL MOSFET

This page provides the datasheet information for the SVT077R5ND, a member of the SVT077R5NT N-CHANNEL MOSFET family.

Datasheet Summary

Description

The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 95A, 68V, RDS(on)(typ. )=6.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L.

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Datasheet preview – SVT077R5ND

Datasheet Details

Part number SVT077R5ND
Manufacturer Silan Microelectronics
File Size 331.58 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT077R5ND Datasheet
Additional preview pages of the SVT077R5ND datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT077R5NT(D)(S)(KL)_Datasheet 95A, 68V N-CHANNEL MOSFET DESCRIPTION The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES  95A, 68V, RDS(on)(typ.)=6.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L ORDERING INFORMATION Part No.
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