Datasheet4U Logo Datasheet4U.com

SVT068R5NT - N-CHANNEL MOSFET

Datasheet Summary

Description

SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 80A, 60V, RDS(on)(typ. )=7.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 13 TO-252-2L PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L.

📥 Download Datasheet

Datasheet preview – SVT068R5NT

Datasheet Details

Part number SVT068R5NT
Manufacturer Silan Microelectronics
File Size 358.71 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT068R5NT Datasheet
Additional preview pages of the SVT068R5NT datasheet.

📁 Similar Datasheet

  • SVT10100U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10100UB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10120VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150V - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT10150VB - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT1080XB - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT12120U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT12150U - EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
  • SVT15100L - ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVT068R5NT/D/S/L5_Datasheet 80A, 60V N-CHANNEL MOSFET DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. These devices are widely used in UPS, Power Management for Inverter Systems. FEATURES  80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 13 TO-252-2L PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No.
Published: |