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SVT035R5NSA - N-CHANNEL MOSFET

Datasheet Summary

Description

SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 5678 4 12 3.
  • 21A, 30V, RDS(on)(typ. )= 4.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated SOP-8-225-1.27.

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Datasheet preview – SVT035R5NSA

Datasheet Details

Part number SVT035R5NSA
Manufacturer Silan Microelectronics
File Size 244.88 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT035R5NSA Datasheet
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Silan Microelectronics SVT035R5NSA_Datasheet 21A, 30V N-CHANNEL MOSFET DESCRIPTION SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES 4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 5678 4 12 3  21A, 30V, RDS(on)(typ.)= 4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT035R5NSA SVT035R5NSATR Package SOP-8-225-1.27 SOP-8-225-1.
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