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SVT033R5NT - N-CHANNEL MOSFET

Datasheet Summary

Description

The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 180A, 30V, RDS(on)(typ. )=2.8m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 1 23 TO-220-3L.

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Datasheet Details

Part number SVT033R5NT
Manufacturer Silan Microelectronics
File Size 267.55 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT033R5NT Datasheet
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Silan Microelectronics SVT033R5NT_Datasheet 180A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No.
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