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SVT03110PL3 - P-CHANNEL MOSFET

Datasheet Summary

Description

SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • -46A, -30V, RDS(on)(typ. ) =7.0m@VGS=-10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 7 8 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.65 KEY.

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Datasheet preview – SVT03110PL3

Datasheet Details

Part number SVT03110PL3
Manufacturer Silan Microelectronics
File Size 329.12 KB
Description P-CHANNEL MOSFET
Datasheet download datasheet SVT03110PL3 Datasheet
Additional preview pages of the SVT03110PL3 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT03110PL3_Datasheet -46A, -30V P CHANNEL MOSFET DESCRIPTION SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES  -46A, -30V, RDS(on)(typ.) =7.0m@VGS=-10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 7 8 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.
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