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SVS20N60PND2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVS20N60PND2, a member of the SVS20N60FJD2-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR family.

Description

SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 20A, 600V, RDS(on)(typ. )=0.16@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P.

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Datasheet preview – SVS20N60PND2

Datasheet Details

Part number SVS20N60PND2
Manufacturer Silan Microelectronics
File Size 474.58 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS20N60PND2 Datasheet
Additional preview pages of the SVS20N60PND2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. 2 1 23 1 TO-262-3L 12 3 TO-220F-3L 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 1 2 3 TO-247-3L 1 23 TO-220-3L FEATURES  20A, 600V, RDS(on)(typ.)=0.
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