SVS11N65F Datasheet PDF (TRANSISTOR) | Download Silan Microelectronics SVS11N65F

SVS11N65F - TRANSISTOR

This page provides the datasheet information for the SVS11N65F, a member of the SVS11N65T TRANSISTOR family.

Description

SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

11A,650V, RDS(on)(typ. )=0.37Ω@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 1 23 TO-220F-3L 1 23 TO-220-3L.

Datasheet Details

Part number	SVS11N65F
Manufacturer	Silan Microelectronics
File Size	239.80 KB
Description	TRANSISTOR
Datasheet	SVS11N65F Datasheet
Additional preview pages of the SVS11N65F datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS11N65T/F/K_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 11 23 3 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES  11A,650V, RDS(on)(typ.)=0.

Published: Apr 21, 2017 |