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SVG086R0NT - 80V N-CHANNEL MOSFET

General Description

SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A, 80V, RDS(on)(typ. )=5.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 TO-220-3L 13 TO-252-2L 1 3 TO-263-2L.

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Datasheet Details

Part number SVG086R0NT
Manufacturer Silan Microelectronics
File Size 378.00 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet SVG086R0NT Datasheet

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Full PDF Text Transcription (Reference)

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Silan Microelectronics SVG086R0NT(S)(D)(L5)_Datasheet 120A, 80V N-CHANNEL MOSFET DESCRIPTION SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES  120A, 80V, RDS(on)(typ.)=5.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 TO-220-3L 13 TO-252-2L 1 3 TO-263-2L ORDERING INFORMATION Part No.