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SVF9N90F - 900V N-CHANNEL MOSFET

Description

SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 9A, 900V, RDS(on) (typ. )=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVF9N90F
Manufacturer Silan Microelectronics
File Size 404.51 KB
Description 900V N-CHANNEL MOSFET
Datasheet download datasheet SVF9N90F Datasheet

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Full PDF Text Transcription

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SVF9N90F/PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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