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SVF8N80F - 800V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF8N80F, a member of the SVF8N80T 800V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF8N80T/F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 2 1 3 12 3 TO-262-3L 1.Gate 2.Drain 3.Source 12 3 1 2 TO-220F-3L 3 TO-220-3L.
  • 8A,800V,RDS(on)(typ. )=1.42@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet preview – SVF8N80F

Datasheet Details

Part number SVF8N80F
Manufacturer Silan Microelectronics
File Size 273.68 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF8N80F Datasheet
Additional preview pages of the SVF8N80F datasheet.

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Silan Microelectronics SVF8N80T/F/K_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 3 12 3 TO-262-3L 1.Gate 2.Drain 3.Source 12 3 1 2 TO-220F-3L 3 TO-220-3L  8A,800V,RDS(on)(typ.)=1.
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