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SVF830FJ - 500V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF830FJ, a member of the SVF830MJ 500V N-CHANNEL MOSFET family.

Description

SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 5A,500V, RDS(on)(typ. )=1.2@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF830FJ
Manufacturer Silan Microelectronics
File Size 599.20 KB
Description 500V N-CHANNEL MOSFET
Datasheet download datasheet SVF830FJ Datasheet
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SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  5A,500V, RDS(on)(typ.)=1.2@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
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