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SVF18N60F - 600V N-CHANNEL MOSFET

Description

SVF18N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 18A,600V,RDS(on)（typ）=0.36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVF18N60F
Manufacturer Silan Microelectronics
File Size 258.73 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF18N60F Datasheet

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Full PDF Text Transcription

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SVF18N60F_Datasheet 18A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 18A,600V,RDS(on)（typ）=0.36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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