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SVF10N65K - 650V N-CHANNEL MOSFET

Download the SVF10N65K datasheet PDF. This datasheet also covers the SVF10N65T variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 10A,650V,RDS(on)(typ. )=0.80@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220-3L 123 TO-262-3L 123 TO-220F-3L 1 3 TO-263-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF10N65T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF10N65K
Manufacturer Silan Microelectronics
File Size 308.52 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N65K Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF10N65CF 650V N-CHANNEL MOSFET
SVF10N65CFJH 650V N-CHANNEL MOSFET
SVF10N65CK 650V N-CHANNEL MOSFET
SVF10N65F 650V N-CHANNEL MOSFET
SVF10N65S 650V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,650V,RDS(on)(typ.)=0.80@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.
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