SVDZ24NT Datasheet PDF - Silan Microelectronics 55V N-CHANNEL MOSFET Specs

SVDZ24NT - 55V N-CHANNEL MOSFET

Datasheet Summary

Description

SVDZ24NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan new planar VDMOS process.

Features

17A,55V,RDS(on)(typ. )=45m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L.

Datasheet Details

Part number	SVDZ24NT
Manufacturer	Silan Microelectronics
File Size	253.53 KB
Description	55V N-CHANNEL MOSFET
Datasheet	SVDZ24NT Datasheet
Additional preview pages of the SVDZ24NT datasheet.

📁 Similar Datasheet

SVD101 - X Band VCO / PLO (Sanyo Semicon Device)

SVD102 - X Band VCO / PLO (Sanyo Semicon Device)

SVD201 - X Band VCO / PLO (Sanyo Semicon Device)

SVD202 - X Band VCO / PLO (Sanyo Semicon Device)

SVD301 - X Band VCO / PLO (Sanyo Semicon Device)

SVD302 - X Band VCO / PLO (Sanyo Semicon Device)

SVD4N60D - 600V N-Channel MOSFET (Silan)

SVD4N60DTR - 600V N-Channel MOSFET (Silan)

SVD4N60F - 600V N-Channel MOSFET (Silan)

SVD4N60FG - 600V N-Channel MOSFET (Silan)

Full PDF Text Transcription

Click to expand full text

Silan Microelectronics SVDZ24NT(D)_Datasheet 17A, 55V N-CHANNEL MOSFET GENERAL DESCRIPTION SVDZ24NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan new planar VDMOS process. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in electrical ballast, low power switching power supply. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  17A,55V,RDS(on)(typ.)=45m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No.

Published: Jul 24, 2024 |