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SVD8N80F - MOSFET

Download the SVD8N80F datasheet PDF. This datasheet also covers the SVD8N80T variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

Features

  • ∗ 8A,800V,RDS(on)（typ）=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD8N80T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD8N80F
Manufacturer Silan Microelectronics
File Size 555.72 KB
Description MOSFET
Datasheet download datasheet SVD8N80F Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD8N80F 800V N-CHANNEL MOSFET
SVD8N80T MOSFET
SVD8N80T 800V N-CHANNEL MOSFET
SVD8N60F 600V N-CHANNEL MOSFET
SVD8N60T 600V N-CHANNEL MOSFET

Full PDF Text Transcription

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SVD8N80T/F_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 8A,800V,RDS(on)（typ）=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No.
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