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SVD1N80BTR - 800V N-CHANNEL MOSFET

Download the SVD1N80BTR datasheet PDF. This datasheet also covers the SVD1N80B variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD1N80B-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD1N80BTR
Manufacturer Silan Microelectronics
File Size 697.87 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVD1N80BTR Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD1N80B 800V N-CHANNEL MOSFET
SVD1N80B 800V N-CHANNEL MOSFET
SVD1N80F 800V N-CHANNEL MOSFET
SVD1N80T 800V N-CHANNEL MOSFET
SVD1N60B 600V N-CHANNEL MOSFET

Full PDF Text Transcription

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SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. TO-251-3L TO-220F-3L 1 3 1.Gate 2.Drain 3.Source TO-220-3L 2 FEATURES ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.
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