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SGT25U120FD1P7 - 1200V FIELD STOP IGBT

General Description

The SGT25U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology,

Key Features

  • low conduction loss and switching loss. This device is applicable to UPS, SMPS, and PFC fields.

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Datasheet Details

Part number SGT25U120FD1P7
Manufacturer Silan Microelectronics
File Size 362.40 KB
Description 1200V FIELD STOP IGBT
Datasheet download datasheet SGT25U120FD1P7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGT25U120FD1P7_Datasheet 25A, 1200V FIELD STOP IGBT DESCRIPTION The SGT25U120FD1P7 field stop IGBT adopts Silan Trench Gate Field Stop IV+ technology, features low conduction loss and switching loss. This device is applicable to UPS, SMPS, and PFC fields. FEATURES  25A, 1200V, VCE(sat)(typ.)=2.2V@IC=25A  Low conduction loss  Ultra-fast switching  High breakdown voltage C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE SGT 25 U 120 F D IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V 1 P7 Package P7 : TO-247-3L 1,2,3… : Version No.