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7N65FJD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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7N65FJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – 7N65FJD2

Datasheet Details

Part number	7N65FJD2
Manufacturer	Silan Microelectronics
File Size	276.40 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	7N65FJD2 Datasheet
Note	This datasheet PDF includes multiple part numbers: 7N65FJD2, 7N65MJD2. Please refer to the document for exact specifications by model.
Additional preview pages of the 7N65FJD2 datasheet.

Product details

Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Enhanced avalanche capability.
Extreme dv/dt rated.
High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

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Published: Oct 25, 2024 |