2SF292200HYY - FAST RECOVERY DIODE CHIPS

Silan Microelectronics

General Description

Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200HYY is a fast recovery diode chips fabricated in silicon epitaxial planar technology; Fast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 29

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Datasheet Details

Part number	2SF292200HYY
Manufacturer	Silan Microelectronics
File Size	53.75 KB
Description	FAST RECOVERY DIODE CHIPS
Datasheet	2SF292200HYY Datasheet

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2SF292200HYY 2SF292200HYY FAST RECOVERY DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200HYY is a fast recovery diode chips fabricated in silicon epitaxial planar technology; Fast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 2920µm; Chip Thickness: 280±20µm; Chip Topography and Dimensions La: Chip Size:2920 µm; Lb: Pad Size: 2840 µm; Ø ORDERING SPECIFICATIONS Product Name 2SF292200HYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage www.DataSheet4U.com Average Forward RectifiedCurrent@Tc=150°C Peak Forward Surge Current@8.