82S16 - 256-BIT BIPOLAR RAM

Signetics

General Description

The 82S16 and 82S17 are Schottky clamped TTL, read/ write memory arrays organized as 256 words of one bit each.

They feature either open collector or tri-state output options for optimization of word expansion in bussed organizations.

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82S16 256-bit bipolar ram by Signetics - Datasheet Preview

Datasheet Details

Part number	82S16
Manufacturer	Signetics
File Size	186.53 KB
Description	256-BIT BIPOLAR RAM
Datasheet	82S16 Datasheet

Other Datasheets by Signetics

Part Number	Description
82S10	1024 x 1-BIT BIPOLAR RAM
82S100	Field Programmable Logic Array
82S101	Field Programmable Logic Array
82S105	Field Programmable Logic Sequencer
82S11	1024 x 1-BIT BIPOLAR RAM
82S112	HIGH SPEED MULTIPORT MEMORY
82S114	2048-BIT BIPOLAR ROM
82S115	4096-BI1 BIPOLAR ROM
82S116	256-BIT BIPOLAR RAM
82S117	256-BIT BIPOLAR RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Sm-DoliCS 82S16 256-BI1 BIPOLAR RAM (256xl RAM) 82S17 ______________{_82_S16_T_RI-_ST_M_E}_{82_S1_70_P_EN_CO_ll_EC_TO~R) FEBRUARY 1975 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S16 and 82S17 are Schottky clamped TTL, read/ write memory arrays organized as 256 words of one bit each. They feature either open collector or tri-state output options for optimization of word expansion in bussed organizations. Memory expansion is further enhanced by full on-chip address decoding, 3 chip enable inputs and PNP input transistors which reduce input loading to 25pA for a "1" level, and -250pA (S82S16/17) or -100pA (N82S16/17) for a "0" level. During WRITE operation, the logical state of the output of both devices follows the complement of the data input being written.