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Schottky Barrier Diode (GaAs)
Features
• Anti-parallel • High Cut-off frequency • Low Series Resistance • Low Capacitance • Designed for Easy Circuit Insertion • Silicon Nitride Passivation
SBD200
Dimensions
Application
• Mixer and Detectors • X, K and Ka Bands Transceiver • 30 GHx and 60 GHz Radios • Automotive Rader Detectors
Absolute Maximum Rating (Ta = 25℃)
Parameter Forward Current Incident Power Operation Temperature Storage Temperature Insertion Temperature
Symbol IF
-
TOPR TSTG
-
Value 15 +20
-55 to +125 -65 to +150
250 ± 5
Unit mA dBm °C °C °C
Electrical Characteristics (Ta = 25℃)
Characteristics Forward Voltage VF Difference Capacitance Series Resistance
Symbol
VF ∆VF CJ RS
Conditions IF = 1 mA IF = 1 mA V= 0 V 10 mA
Min.