SGB10N60
Preliminary data
SGP10N60, SGB10N60, SGW10N60
Fast S-IGBT in NPT-Technology
- 75 % lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time 10 µs
- Designed for moderate and high frequency applications:
- SMPS and PFC up to 150 k Hz
- Inverter, Motor controls
- NPT-Technology for 600V applications offers:
- tighter parameter distribution
- higher ruggedness, temperature stable behaviour
- parallel switching capability
Type SGP10N60 SGB10N60 SGW10N60
VCE 600 V
IC 10 A
VCE(sat) Tj Package 2.2 V 150 °C TO-220AB
TO-263AB TO-247AC
Ordering Code Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25 °C
TC = 100 °C
Pulsed collector current, tp limited by Tjmax Gate-emitter voltage
Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25 °C
ICpuls VGE EAS
Short circuit withstand time 1) tsc
VGE = 15 V, VCC = 600 V, Tj...
