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HYM72V2005GS-60 - 2M x 72-Bit EDO-DRAM Module

Description

Pin Names A0-A11,B0 A0-A10,B0 DQ0 - DQ71 RAS0, RAS2 CAS0 , CAS2 WE0, WE2 OE0, OE2 Vcc Vss PD1 - PD8 PDE ID0 , ID1 N.C.

Features

  • ite Cycle Read-write cycle time RAS to WE delay time CAS to.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM72V2005GS-50 2M x 72-Bit EDO-DRAM Module
HYM72V2005GS-50- 2M x 72-Bit EDO-DRAM Module
HYM72V2005GU-50 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
HYM72V2005GU-60 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
HYM72V1005GU-50 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module

Full PDF Text Transcription

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2M × 72-Bit EDO-DRAM Module (ECC - Module) 168 pin buffered DIMM Module HYM 72V2005GS-50/-60 • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications 1 bank 2 M x 72 organisation Optimized for ECC applications Extended Data Out (EDO) Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 18 30 84 20 -60 60 20 35 104 25 ns ns ns ns ns • • • • • • • • • • • • • • • Single + 3.3V ± 0.
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