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HYM721000GS-60 - 1M x 72-Bit Dynamic RAM Module

Description

Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) .

For PDE at a high level all PD terminal are in tri-state.

Features

  • ime Write comm.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM721000GS-60- 1M x 72-Bit Dynamic RAM Module
HYM721000GS-70 1M x 72-Bit Dynamic RAM Module
HYM721010GS-60 1M x 72-Bit Dynamic RAM Module
HYM721010GS-70 1M x 72-Bit Dynamic RAM Module
HYM724000GS-50 4M x 72-Bit Dynamic RAM Module

Full PDF Text Transcription

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1M × 72-Bit Dynamic RAM Module (ECC - Module) HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • • 1 048 576 words by 72-bit ECC - mode organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 10890 mW active (-60 version) max.
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