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HYM64V1005GU-60 - 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module

Description

Pin Names A0-A9 DQ0 - DQ63 CB0-CB7 RAS0, RAS2 CAS0 - CAS7 WE0, WE2 OE0, OE2 Vcc Vss SCL SDA SA0-SA2 N.C.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM64V1005GU-5 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1005GU-50 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
HYM64V1605GU-50 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM64V1605GU-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM64V1645GU-50 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module

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3.3V 1M × 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • HYM64V1005GU-50/-60 HYM72V1005GU-50/-60 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module for PC main memory applications 1 bank 1M x 64, 1M x 72 organisation Optimized for byte-write non-parity or ECC applications Extended Data Out (EDO) Performance: -50 tRAC tCAC tAA tRC tHPC RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mode Cycle Time 50 ns 13 ns 25 ns 84 ns 20 ns -60 60 ns 15 ns 30 ns 104 ns 25 ns • • • • • • • • • • Single +3.3 V ± 0.
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