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4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
HYM 324000GD-50/-60
Preliminary Information
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4 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 1008 mW active (-50 version) max. 864 mW active (-60 version) LVCMOS – 1.8 mW standby TTL – 14.4 mW standby
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CAS-before-RAS refresh, RAS-only-refresh.