Datasheet4U Logo Datasheet4U.com

HYB514800BJ - 512kx8-Bit Dynamic RAM

Description

The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit.

Features

  • , ICC4 and ICC6 depend on cycle rate. ICC1 , ICC4 depend on output loading. 4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 5.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HYB18H1G321AF-10 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM Qimonda AG
HYB18H1G321AF-11 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM Qimonda AG
HYB18H1G321AF-14 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM Qimonda AG
HYB18H256321AF-12 256-Mbit x32 GDDR3 DRAM Infineon
HYB18H256321AF-14 256-Mbit x32 GDDR3 DRAM Infineon

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB514100BJ-50 4M x 1-Bit Dynamic RAM
HYB514100BJ-60 4M x 1-Bit Dynamic RAM
HYB514171BJ-50 256k x 16-Bit Dynamic RAM
HYB514171BJ-60 256k x 16-Bit Dynamic RAM
HYB514175BJ-50 256k x 16-Bit EDO-DRAM

Full PDF Text Transcription

Click to expand full text
512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • • • 512 288 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 60 ns (-60 version) 70 ns (-70 version) 80 ns (-80 version) CAS access time: 20 ns Cycle time: 110 ns (-60 version) 130 ns (-70 version) 150 ns (-80 version) Fast page mode cycle time 45 ns (-60 version) 45 ns (-70 version) 50 ns (-80 version) Single + 5 V (± 10 %) supply with a built-in Vbb generator • Low power dissipation max. 605 mW active (-60 version) max. 550 mW active (-70 version) max. 468 mW active (-80 version) Standby power dissipation: 11 mW standby standby (TTL) 5.5 mW max.
Published: |