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HYB514256BJL-70 - 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

Description

DRAM (access time 50ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)

Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB514256BJL-50 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJL-60 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJ-50 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJ-60 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJ-70 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

Full PDF Text Transcription

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256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) • Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) • Low power dissipation max. 495 mW active (-50 version) max. 440 mW active (-60 version) max. 385 mW active (-70 version) max. 5.5 mW standby max. 1.
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