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HYB511000BJ- - 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 33 01.95 HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 5

Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB511000BJ-50 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
HYB511000BJ-60 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
HYB511000BJ-70 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
HYB511000BJL-50 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
HYB511000BJL-60 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM

Full PDF Text Transcription

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1 M × 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 130 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) • Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) • Low power dissipation max. 495 mW active (-50 version) max. 440 mW active (-60 version) max. 385 mW active (-70 version) max. 5.5 mW standby max. 1.
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