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SFH495P - GaAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlun

Features

  • q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet lieferbar current q High reliability q Available on tape and reel Anwendungen q Datenübertragung q Fernsteuerungen q „Messen, Steuern, Regeln“.

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📁 Similar Datasheet

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SFH495P GaAs Infrared Emitter OSRAM
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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
SFH400 GaAs Infrared Emitter
SFH402 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
SFH405 GaAs Infrared Emitter
SFH407 INFRARED EMITTER
SFH409 GaAs Infrared Emitter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 29 27 5.0 4.2 Anode 2.54 mm spacing 5.9 5.5 0.6 0.4 0.8 0.4 Area not flat Chip position GEX06971 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Stimulierter Emitter mit sehr hohem q q q q Features q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp.
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