The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Low Leakage Diode Array
Low-leakage applications q Medium speed switching times q Connected in series
q
BAV 199
Type BAV 199
Marking JYs
Ordering Code (tape and reel) Q62702-A921
Pin Configuration
Package1) SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 70 70 200 4.5 330 150 – 65 … + 150
Unit V mA A mW ˚C
500 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.