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Q62702-A826 - Silicon Schottky Diode

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Schottky Diode q q q q q q BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band (GHz) Marking Ordering Code (tape and reel) 32 Q62702-A826 Pin Configuration Package1) Cerec-X BAT 32 … 18 (X, Ku) Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range Symbol VR IF Tj Tstg Top Values 6.5 50 150 – 55 … + 150 – 55 … + 150 Unit V mA ˚C 1) For detailed information see chapter Package Outlines. BAT 32 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
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