Datasheet4U Logo Datasheet4U.com

Q62702-A1270 - Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Q62702P1137 Infra-red Emitter 5mm Siemens
Q62702P1759 Laser Diode Osram
Q62705-K110 Silicon Spreading Resistance Temperature Sensor Siemens Semiconductor
Q62705-K111 Silicon Spreading Resistance Temperature Sensor Siemens Semiconductor

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
Q62702-A1271 Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
Q62702-A1272 Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
Q62702-A1273 Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
Q62702-A1274 Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
Q62702-A1277 Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

Full PDF Text Transcription

Click to expand full text
BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering Code BBs Q62702-A1270 Pin Configuration Package 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 30 100 100 150 -55 ...+125 -55 ...+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 200 ≤ 120 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.
Published: |