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HYB3164805TL-50 - 8M x 8-Bit Dynamic RAM

Download the HYB3164805TL-50 datasheet PDF. This datasheet also covers the HYB-316 variant, as both devices belong to the same 8m x 8-bit dynamic ram family and are provided as variant models within a single manufacturer datasheet.

Description

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 50

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYB-316-480.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3164805TL-60 8M x 8-Bit Dynamic RAM
HYB3164805T-50 8M x 8-Bit Dynamic RAM
HYB3164805T-60 8M x 8-Bit Dynamic RAM
HYB3164805AJ-40 8M x 8-Bit Dynamic RAM
HYB3164805AJ-50 8M x 8-Bit Dynamic RAM

Full PDF Text Transcription

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805J/T(L) -50/-60 HYB 3165805J/T(L) -50/-60 Preliminary Information • • • • • • • • • • • 8 388 608 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164805J/T(L)-50) max. 360 active mW ( HYB 3164805J/T(L)-60) max. 504 active mW ( HYB 3165805J/T(L)-50) max. 432 active mW ( HYB 3165805J/T(L)-60) 7.2 mW standby (TTL) 720 W standby (MOS) 14.
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