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HYB3164405TL-50 - 16M x 4-Bit Dynamic RAM

Description

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 50

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3164405TL-60 16M x 4-Bit Dynamic RAM
HYB3164405T-50 16M x 4-Bit Dynamic RAM
HYB3164405T-60 16M x 4-Bit Dynamic RAM
HYB3164405AJ-40 16M x 4-Bit Dynamic RAM
HYB3164405AJ-50 16M x 4-Bit Dynamic RAM

Full PDF Text Transcription

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16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164405J/T(L) -50/-60 HYB 3165405J/T(L) -50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164405J/T(L)-50) max. 360 active mW ( HYB 3164405J/T(L)-60) max. 504 active mW ( HYB 3165405J/T(L)-50) max. 432 active mW ( HYB 3165405J/T(L)-60) 7.2 mW standby (TTL) 720 W standby (MOS) 14.
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