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HYB3164400AJ-60 - 16M x 4-Bit Dynamic RAM

Description

DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns)

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3164400AJ-40 16M x 4-Bit Dynamic RAM
HYB3164400AJ-50 16M x 4-Bit Dynamic RAM
HYB3164400AT-40 16M x 4-Bit Dynamic RAM
HYB3164400AT-50 16M x 4-Bit Dynamic RAM
HYB3164400AT-60 16M x 4-Bit Dynamic RAM

Full PDF Text Transcription

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16M x 4-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -40 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/write cycle time Fast page mode cycle time 40 10 20 75 30 -50 50 13 25 90 35 -60 60 15 30 110 40 ns ns ns ns ns • • Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 396 mW active ( HYB 3164400AJ/AT(L) -40) max. 324 mW active ( HYB 3164400AJ/AT(L) -50) max. 270 mW active ( HYB 3164400AJ/AT(L) -60) max. 558 mW active ( HYB 3165400AJ/AT(L) -40) max. 468 mW active ( HYB 3165400AJ/AT(L) -50) max. 378 mW active ( HYB 3165400AJ/AT(L) -60) 7.
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