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HYB314265BJL-45 - 256K x 16-Bit EDO-Dynamic RAM

Download the HYB314265BJL-45 datasheet PDF. This datasheet also covers the HYB-314 variant, as both devices belong to the same 256k x 16-bit edo-dynamic ram family and are provided as variant models within a single manufacturer datasheet.

Description

Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS H H H L L H L L L WE H H H H H L L L H OE H H L L L H H H H I/O1-I/O8 High-Z High-Z Dout High-Z Dout Din Don't care Din High-Z I/O9-I/O16 High-Z High-Z High-Z Dout Dout Don't care Din Din High-Z Operation Standby Refresh Lower byte read

Features

  • mand to CAS lead time Data setup time Data hold time Data to CAS low delay tWCH tWP tWCS tRWL tCW.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYB-314-255.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB314265BJL-50 256K x 16-Bit EDO-Dynamic RAM
HYB314265BJ-45 256K x 16-Bit EDO-Dynamic RAM
HYB314265BJ-50 256K x 16-Bit EDO-Dynamic RAM
HYB314100BJ-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJ-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Full PDF Text Transcription

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256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature EDO - Hyper Page Mode Performance: -400 -40 69 40 10 20 15 66 -45 79 45 12 22 18 55 -50 89 50 13 25 20 50 ns ns ns ns ns MHz • Power Supply: HYB 514265BJ-400 HYB 514265BJ-40 HYB 514265BJ-45 HYB 514265BJ-50 +5 V +5 V +5 V +5 V ±5% ±10% ±10% ±10% HYB 314265BJ(L)-45 +3.3 V ±0.3 V HYB 314265BJ(L)-50 +3.3 V ±0.
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